Method for forming an insulated gate field effect transistor

Details Method for forming an insulated gate field effect transistor Method for forming an insulated gate field effect transistor

1994-05-27

1995-12-19

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 44, 437186, 437233, H01L 21336, H01L 2184

Patent

active

054768020

ABSTRACT:
A method for forming an insulated gate field effect transistor capable of providing shorter channel lengths, said process comprising:

REFERENCES:
patent: 3997367 (1976-12-01), Yau
patent: 4312680 (1982-01-01), Hsu
patent: 4366613 (1983-01-01), Ogura et al.
patent: 4503601 (1985-03-01), Chiao
patent: 4616399 (1986-10-01), Ooka
patent: 4701423 (1987-10-01), Szluk
patent: 4885259 (1989-12-01), Osinski et al.
patent: 4971922 (1990-11-01), Watabe et al.
patent: 4978626 (1990-12-01), Poon et al.
patent: 5139904 (1992-08-01), Auda et al.
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5151374 (1992-09-01), Wu
patent: 5227321 (1993-07-01), Lee et al.
patent: 5238859 (1993-08-01), Kamijo et al.
patent: 5362661 (1994-11-01), Kim

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