Electricity: measuring and testing – For insulation fault of noncircuit elements
Patent
1998-03-27
2000-09-12
Ballato, Josie
Electricity: measuring and testing
For insulation fault of noncircuit elements
324765, 204434, 2057915, G01N 2700
Patent
active
06118280&
ABSTRACT:
Disclosed are a method and an apparatus for detecting a defect in a dielectric film. The dielectric film is electrified in an electrolyte solution containing a metal in such a manner the dielectric film is charged negative, thereby the metal is deposited on the dielectric film at a position corresponding to the defect. The detecting method has a first deposition step for forming a first metal deposit on the dielectric film in an annular form surrounding the position corresponding to the defect; and a second deposition step for forming a second metal deposit located on the position corresponding to the defect, on the dielectric film. The detecting apparatus has a vessel for accommodating the electrolyte solution; a first electrode for electrifying the dielectric film and a second electrode; and an electric power source for controlably applying a voltage to electrifying between the first electrode and the second electrode in which a value and a direction of the applied voltage is variable.
REFERENCES:
patent: 3379625 (1968-04-01), Csabi
patent: 5015346 (1991-05-01), Guilinger
W. J. Shannon, "A Study of Dielectric Defect Detection by Decoration With Copper" RCA Review, vol. 31, Jun. 1970, pp. 431-438.
Manabu Itsumi et al., "The origin of defects in SiO.sub.2 thermally grown on Czochralski silicon substrates" J. Appl. Phys., vol. 78, No. 3, Aug. 1995, pp. 1940-1943.
Matsunaga Hideki
Okada Akira
Suzuki Isao
Takeno Shiro
Tomita Hiroshi
Ballato Josie
Kabushiki Kaisha Toshiba
Sundaram T. R.
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