Semiconductor laser including tunnel diode for reducing contact

Details Semiconductor laser including tunnel diode for reducing contact Semiconductor laser including tunnel diode for reducing contact

1996-01-31

1998-05-12

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

057517541

ABSTRACT:
A semiconductor laser includes an n type semiconductor substrate, an n type cladding layer, an active layer having an effective band gap energy, a p type cladding layer, and a tunnel diode structure including a high dopant concentration p type semiconductor layer and a high dopant concentration n type semiconductor layer having an effective band gap energy larger than the effective band gap energy of the active layer, a p side electrode disposed on the tunnel diode structure, and an n side electrode disposed on the rear surface of the n type semiconductor substrate. Since this semiconductor laser includes the tunnel diode structure disposed in the reverse bias direction with respect to the current flow direction, the contact resistivity of the ohmic contact of the p side electrode is lowered as compared to the case where the p side electrode is disposed on a p type semiconductor layer. The effective contact resistivity of the p side electrode is reduced. As a result, a semiconductor laser including a p side electrode having a low contact resistivity ohmic contact is realized.

REFERENCES:
patent: 5212706 (1993-05-01), Jain
patent: 5365536 (1994-11-01), Seki
patent: 5452316 (1995-09-01), Seki et al.
Dautremont-Smith et al, "A Nonalloyed, Low Specific Resistance Ohmic Contact To n-InP", Journal of Vacuum Science, vol. B2, No. 4, 1984, pp. 620-625.

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