Method of making a semiconductor device having DRAM cells and fl

Details Method of making a semiconductor device having DRAM cells and fl Method of making a semiconductor device having DRAM cells and fl

1989-02-10

1991-10-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 43, 437 47, 437 48, 437 49, 437 50, 437 60, 437233, 437235, 437919, H01L 2170

Patent

active

050574485

ABSTRACT:
In a semiconductor integrated circuit device having a dynamic type memory element (DRAM), a non-volatile memory element of FLOTOX structure and a MISFET, a dielectric film of an information storing capacitance element fo the DRAM and a tunnel insulation film of the non-volatile memory element are constituted in film thickness less than that of a gate insulation film of the MISFET. Thin dielectric film increases the charge storage quantity of the information storing capacitance element and decreases the occupation area of the DRAM. Thin tunnel insulation film increases the tunnel current quantity and decreases the information write time of the non-volatile memory element. Process of forming the dielectirc film and process of forming the tunnel insulation film are performed in the same process, thereby the manufacaturing process of the semiconductor integrated circuit device is reduced.

REFERENCES:
patent: 4103348 (1978-07-01), Fagan
patent: 4229755 (1980-10-01), Custode
patent: 4373249 (1983-02-01), Kosa et al.
patent: 4441249 (1984-04-01), Alspector et al.
patent: 4466177 (1984-08-01), Chao
patent: 4545035 (1985-10-01), Guterman et al.
patent: 4586238 (1988-05-01), Yatsuda et al.
patent: 4672580 (1987-06-01), Yau et al.
patent: 4822750 (1989-04-01), Perlegos et al.

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