Device for and method of sensing data of multi-bit memory cell

Static information storage and retrieval – Floating gate – Multiple values

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3651852, 36518521, G11C 1134

Patent

active

057516324

ABSTRACT:
A device for and method of sensing data of a multi-bit memory cell includes a memory cell having a gate, a source and a drain, the memory cell being programmed with at least two voltage levels, a voltage generator coupled to the memory cell and providing the gate of the memory cell with a voltage, the voltage being increased linearly, a sensing amplifier coupled to the memory cell and generating a sensing signal when a drain voltage of the memory cell is lower than a reference voltage, a voltage detector coupled to the sensing amplifier and the voltage generator and detecting synchronously a gate voltage of the memory cell with the sensing signal of the sensing amplifier, andan A/D converter coupled to the voltage detector and translating the gate voltage detected in the voltage detector into a digital value.

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