Method for forming metal via

Details Method for forming metal via Method for forming metal via

1994-06-06

1995-06-06

Quach, T. N.

Fishing, trapping, and vermin destroying

437228, 437978, 437981, 148DIG105, H01L 2128, H01L 2131

Patent

active

054223121

ABSTRACT:
A method of forming a metal via on a semiconductor substrate having a metal layer and a dielectric layer on the metal layer, which uses an intermediate mask layer as a mask in forming the metal via instead of using a photoresist as a mask. Therefore, the spin-on glass (SOG) layer in the dielectric layer is not exposed to plasma or solvent, thereby preventing the formation of polymers which cause poor step coverage and sometimes even contact failure in the metal via.

REFERENCES:
patent: 4737757 (1988-04-01), Senda et al.
patent: 4745089 (1988-05-01), Orban
patent: 5219793 (1993-06-01), Cooper et al.

Affiliated with

Also associated with

Rating

Method for forming metal via does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming metal via, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming metal via will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-987541