Method for manufacturing a conductor layer in a semiconductor de

Details Method for manufacturing a conductor layer in a semiconductor de Method for manufacturing a conductor layer in a semiconductor de

1994-05-02

1995-06-06

Quach, T. N.

Fishing, trapping, and vermin destroying

437101, 437200, 437967, 748DIG1, H01L 2128, H01L 21324

Patent

active

054223113

ABSTRACT:
A method for manufacturing a conductor layer in a semiconductor device is achieved with a reduced resistivity in the conductor layer. When a polycide film comprised of a polysilicon film and a tungsten silicide film is manufactured, the grain size of the polysilicon film is increased to reduce the resistivity of the polysilicon film. Also, the silicon in the tungsten silicide film is transferred to the boundary between the tungsten silicide film and the polysilicon film to increase the adhesion properties therebetween. Accordingly, a lifting or separation phenomenon is eliminated. Furthermore, since the silicon in the tungsten silicide film is decreased by the transfer, the resistance of the conductor layer is reduced.

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Shenai, K., "Structural and Electrical Properties . . . ", IEEE Trans. Electron Devices, vol. 39, No. 1, Jan. 1992, pp. 193-199.

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