Method of forming implanted silicon resonant tunneling barriers

Details Method of forming implanted silicon resonant tunneling barriers Method of forming implanted silicon resonant tunneling barriers

1994-05-31

1995-06-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 89, 437110, H01L 2120

Patent

active

054223059

ABSTRACT:
A resonant tunneling diode (400) made of a silicon quantum well (406) with silicon oxide tunneling barriers (404, 408). The tunneling barriers have characteristics of implanted oxygen segregated into oxide layers.

REFERENCES:
patent: 5013685 (1991-05-01), Chiu et al.
patent: 5192709 (1993-03-01), Petroff
patent: 5216262 (1993-06-01), Tsu
patent: 5234848 (1993-08-01), Seabaugh
patent: 5342804 (1994-08-01), Beam, III

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