Method for producing a three-dimensional semiconductor device

Details Method for producing a three-dimensional semiconductor device Method for producing a three-dimensional semiconductor device

1992-11-10

1995-06-06

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 89, 437 90, 437106, 437915, 437 57, 148DIG164, H01L 2904, H01L 2120

Patent

active

054223024

ABSTRACT:
A semiconductor device has an insulated gate type transistor. The insulated gate type transistor is formed on an insulating surface of substrate.
The insulated gate type transistor is formed in a single crystal layer which is grown from a single nucleus formed on nucleation region which is provided on said insulating surface, which has sufficiently greater nucleation density than material of said insulating surface and which has sufficiently small size so that only one nucleus can be grown.

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