Method of manufacturing a precision integrated resistor

Details Method of manufacturing a precision integrated resistor Method of manufacturing a precision integrated resistor

1992-09-23

1995-06-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437918, 338314, H01L 2170

Patent

active

054222982

ABSTRACT:
A precision resistor, on a semiconductor substrate, formed by using two polysilicon stripes to mask the oxide etch (and ion implantation) which forms a third conductive stripe in a moat (active) area of the substrate. The sheet resistance R.sub.p and a patterned width W.sub.p of the polysilicon stripes and the patterned width W.sub.M and sheet resistance R.sub.M, are related as R.sub.p W.sub.p =2R.sub.M W.sub.M. By connecting the three stripes in parallel, a net resistance value is achieved which is independent of linewidth variation.

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patent: 5141597 (1992-08-01), Adams et al.
patent: 5185285 (1993-02-01), Hosaka

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