Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1998-03-11
2000-09-12
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257250, H01L 27148
Patent
active
061181439
ABSTRACT:
A solid state image sensor includes a photodiode, a vertical charge coupled device positioned to a side of the photodiode for transmitting charges generated in the photodiode, a first polygate extending in a horizontal direction and partly overlapping the vertical charge coupled device, and a second polygate extending in a horizontal direction, partly overlapping the vertical charge coupled device and having a second polygate extension, wherein the second polygate extension extends for substantially an entire length of the side of the photodiode.
LG Semicon Co. Ltd.
Prenty Mark V.
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