Semiconductor device formed on a substrate having an off-angle s

Details Semiconductor device formed on a substrate having an off-angle s Semiconductor device formed on a substrate having an off-angle s

1996-04-03

1998-05-12

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257627, 257628, H01L 310328

Patent

active

057510288

ABSTRACT:
A compound semiconductor device includes a compound semiconductor layer having an upper major surface formed with a multi-step structure, wherein said multi-step structure includes a plurality of steps each having a step height of at least 5 atomic layers and a step width of 300 nm or more.

REFERENCES:
patent: 5436468 (1995-07-01), Nakata et al.

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