Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1994-12-06
1998-05-12
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257310, 257758, H01L 27108, H01L 2904, H01L 2976, H01L 31112
Patent
active
057510199
ABSTRACT:
Method and apparatus for reducing current leakage between overlapping conductive structures in a multi-layered integrated circuit device such as a thin film capacitor is described. A conductive structure operating as a raised lower electrode is preferably fashioned by step-like erosion using a photolithographic techniques atop a dielectric substrate. In accordance with this invention, the dielectric substrate itself is allowed to erode as well to space the conductive structure away from the problemmatic inner corners of the step. By so distancing such conductive structures, like electrodes, from these inside corners, even conventional deposition techniques can be used to fabricate a capacitive device of operational tolerance suitable for DRAM application without risk of unwanted electrode current leakage and possible shorting. By so separating, the capacitance of the device can be reliably increased by increasing the available three dimensional capacitor area and decreasing the film thickness rather than relying primarily on high permittivity dielectrics.
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Article by Eimore, et al, entitled A Newly Designed Planar Stacked Capacitor Cell with High dielectric Constant Film for 256Mbit DRAM, published in IEEE in 1993, 631-634.
Article by T. Ema, et al, entitled 3-Dimensional Stacked Capacitor Cell for 16M, and 64M DRAMS, published in IEEE in 1988, 592 IDEM88-595 IDEM88.
Clark S. V.
Saadat Mahshid D.
Varian Associates Inc.
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