Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-05-22
1998-05-12
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 13, 257 15, 257 87, 257 22, H01L 3300
Patent
active
057510148
ABSTRACT:
On a first cladding layer formed of n-type Al.sub.0.7 Ga.sub.0.3 P, an active region having a staggered-type (type II) heterojunction superlattice structure is disposed. The active region includes 50 light emitting layers formed of Al.sub.0.1 Ga.sub.0.9 P doped with nitrogen and 50 barrier layers formed of Al.sub.0.7 Ga.sub.0.3 P. The 50 light emitting layers and the 50 barrier layers formed of such materials are stacked alternately to form 50 pairs. On the active region, a second cladding layer formed of Al.sub.0.1 Ga.sub.0.9 P is disposed. In the formation of the active layer, the composition of the light emitting layer and the barrier layer and the thickness of the barrier layer are controlled so that the isoelectronic level in the light emitting layer and the quantum level in the barrier layer will fulfill the resonance conditions. The carriers injected into the conduction band are confined in the quantum level in the barrier layer and transfer to the isoelectronic level in the light emitting layer by the resonance tunneling effect.
REFERENCES:
patent: 4675709 (1987-06-01), Scifres et al.
patent: 5075743 (1991-12-01), Behfar-Rad
Lugagne-Delpon, et al., "Observation of Laser Emission in an InP-AlAnAs Type II Superlattice," Applied Physics Lett ers, vol. 60, No. 25, Jun. 1992, pp. 3087-3089.
Lugagne-Delpon et al, "Observation of Laser Emission in an InP-AllnAs type II Superlattice", Appl. Phys. Lett., 60(25), pp. 3087-3089, 1992 no month.
Nakamura Jun-ichi
Nakatsu Hiroshi
Guay John
Jackson Jerome
Sharp Kabushiki Kaisha
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