Mask having a tapered profile used during the formation of a sem

Details Mask having a tapered profile used during the formation of a sem Mask having a tapered profile used during the formation of a sem

1996-05-20

1998-05-12

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

430312, 430313, 438713, 438736, 438738, 438743, 438744, H01L 2102

Patent

active

057504415

ABSTRACT:
A method and apparatus for improving the accuracy of a contact to an underlying layer comprises the steps of forming a first photoresist layer over the underlying layer, forming a mask layer over the first photoresist layer, then forming a patterned second photoresist layer over the mask layer. The mask layer is patterned using the second photoresist layer as a pattern then the first photoresist layer is patterned using the mask layer as a pattern. A tapered hole is formed in the first photoresist layer, for example using an anisotropic etch. The tapered hole has a bottom proximate the underlying layer and a top distal the underlying layer with the top of the hole being wider than the bottom of the hole.

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