Coherent light generators – Particular active media – Semiconductor
Patent
1991-07-02
1992-12-22
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
385129, 385130, 385131, 385 7, 385 37, H01S 319, G02B 612
Patent
active
051739151
ABSTRACT:
A variable wavelength light source using a semiconductor laser element suitable for use in optical communications is provided. Light emitted from one end surface of the semiconductor laser element is led along a path through a light wavefront converting element (e.g., a Fresnel lens) and a spatial light modulating element which are both formed in a waveguide layer, to a diffraction grating which is also formed in the waveguide layer. Light reflected from the diffraction grating is caused to travel back along the same path but in the opposite direction and to impinge on the semiconductor laser element. Wavelength selection of by the spatial light modulating element and the diffraction grating is utilized for generating and maintaining oscillation at a selected wavelength in the laser element. The wavelength of light is selected by selecting the wavelength of a surface acoustic wave generated the spatial light modulating element, i.e., by changing the frequency of a high frequency electrical signal applied to the modulating element.
REFERENCES:
patent: 4274706 (1981-06-01), Tangonan
patent: 4707835 (1987-11-01), Mocker
patent: 4776661 (1988-10-01), Handa
patent: 4793675 (1988-12-01), Handa
patent: 4861128 (1989-08-01), Ishikawa et al.
patent: 4937808 (1990-06-01), Shimada et al.
patent: 5003550 (1991-03-01), Welch et al.
patent: 5016253 (1991-05-01), Kubota
patent: 5050488 (1991-12-01), Fukushima et al.
patent: 5083856 (1992-01-01), Hatori et al.
patent: 5101297 (1992-03-01), Yoshida et al.
Lean et al, "Thin-Film Acoustooptic Devices", Proceedings of the IEEE, vol. 64, No. 5, May 1976, pp. 779-788.
Murakami et al, "Wide Tunable Wavelength and Narrow Linewidth Laser Diode Using External Grating", Institute of Electronics and Communication Engineers of Japan, 1988.
Chang et al, "Fresnel Lenses in Optical Waveguides", IEEE Journal of Quantum Electronics, vol. QE-16, No. 7, Jul. 1980, pp. 744-753.
Gurov et al., "Electronic frequency tuning in a semiconductor laser with an external resonator", Nov. 1987, pp. 1352-1353.
Epps Georgia Y.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-978742