Method for fabricating monocrystalline semiconductor layer on in

Details Method for fabricating monocrystalline semiconductor layer on in Method for fabricating monocrystalline semiconductor layer on in

1983-12-13

1985-06-18

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 148DIG91, 357 91, 427 531, H01L 21263, B05D 306

Patent

active

045239622

ABSTRACT:
A method for fabricating a monocrystalline semiconductor layer on an insulating layer in the production of a semiconductor device wherein the location of grain boundaries is accurately controlled, thereby making the crystal orientation of the monocrystalline semiconductor layer uniform over a large area. An antireflection layer is formed above a polycrystalline of amorphous semiconductor layer formed on a main face of a monocrystalline semiconductor substrate which contacts the monocrystalline semiconductor substrate through windows formed in a thick insulating layer. The antireflection layer includes a first portion which covers all of the area of the polycrystalline or amorphous semiconductor layer above the windows, and a second portion, which has the form of a grid composed of parallel lines extending from the first portion in the direction of the crystallographic axis of the monocrystalline semiconductor substrate and partially covering a second area between the first areas. A laser beam is scanned from the first portions of the antireflection layer above the windows in directions parallel to the lines of the grid of the antireflection layer.

REFERENCES:
patent: 4240843 (1980-12-01), Celler et al.
patent: 4319954 (1982-03-01), White et al.
patent: 4323417 (1982-04-01), Lam
patent: 4377031 (1983-03-01), Goto
patent: 4381201 (1983-04-01), Sakurai
patent: 4381202 (1983-04-01), Mori et al.
patent: 4414242 (1983-11-01), Nishimura
patent: 4415383 (1983-11-01), Naem et al.
patent: 4431459 (1984-02-01), Teng
patent: 4437225 (1984-03-01), Mitzutani
Biegelsen et al., Appl. Phys. Letts. 38 (Feb. 1981), 150.
Fowler et al., IBM-TDB, 22, (1980) 5473.
Tamura et al., J. Appl. Phys. 50 (1979) 3783.

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