Low dielectric constant layers via immiscible sol-gel processing

Details Low dielectric constant layers via immiscible sol-gel processing Low dielectric constant layers via immiscible sol-gel processing

1994-05-27

1998-05-12

Niebling, John

Fishing, trapping, and vermin destroying

437228, H01L 2144

Patent

active

057504156

ABSTRACT:
A method for forming air gaps 22 between metal leads 16 of a semiconductor device. A metal layer is deposited on a substrate 12. The metal layer is etched to form metal leads 16, exposing portions of the substrate 12. A disposable liquid 18 is deposited on the metal leads 16 and the exposed portions of substrate 12, and a top portion of the disposable liquid 18 is removed to lower the disposable liquid 18 to at least the tops of the leads 16. A porous silica precursor film 20 is deposited on the disposable liquid 18 and over the tops of the leads 16. The porous silica precursor film 20 is gelled to form a low-porosity silica film 24. The disposable liquid 18 is removed through the low-porosity silica film 24 to form air gaps 22 between metal leads 16 beneath the low-porosity silica film 24. The air gaps 22 have a low dielectric constant and result in reduced capacitance between the metal leads and decreased power consumption.

REFERENCES:
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patent: 5444015 (1995-08-01), Aitken et al.
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5598026 (1997-01-01), Kapoor et al.

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