Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1991-07-26

1992-12-22

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

372 45, 257 43, 257103, 257 94, 257 78, H01L 29161

Patent

active

051737515

ABSTRACT:
A semiconductor light emitting device has an epitaxial layer of which lattice match with a substrate crystal is made. The epitaxial layer is formed of mixed crystals of a plurality of Group III-V compound semiconductors on the substrate formed of a crystal of ZnO. More particularly, the expitaxial layer is formed of:

REFERENCES:
patent: 4386295 (1983-05-01), Fujita et al.
patent: 4697202 (1987-09-01), Sher
patent: 4903088 (1990-02-01), Van Opdorp
patent: 5006908 (1991-04-01), Matsuoka et al.
patent: 5076860 (1991-12-01), Ohba et al.
patent: 5078803 (1992-01-01), Pier et al.

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