Lateral depletion mode tyristor

Details Lateral depletion mode tyristor Lateral depletion mode tyristor

1988-07-05

1990-07-17

Hille, Rolf

357 41, 357 43, 357 2314, H01L 2974, H01L 2702, H01L 2978

Patent

active

049424459

ABSTRACT:
A lateral depletion mode thyristor has both of its power electrodes and both of its emitter regions extending to the same surface of the semiconductor wafer. The device operates with both a regenerative current path and a non-regenerative current path. An insulated gate electrode structure is disposed in a trench and configured to pinch off the regenerative current path to force the current flowing therein to transfer to the non-regenerative current path, thereby interrupting the regenerative action within the device and causing it to turn off. In some embodiments, a second insulated gate electrode controls device turn-on.

REFERENCES:
patent: 4779123 (1988-10-01), Bencuya
patent: 4786958 (1988-11-01), Bhagat
patent: 4799095 (1989-01-01), Bahga
patent: 4811072 (1989-03-01), Risberg

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