Semiconductor device having improved Schottky-barrier junction

Details Semiconductor device having improved Schottky-barrier junction Semiconductor device having improved Schottky-barrier junction

1977-09-14

1980-04-08

James, Andrew J.

357 65, 357 67, 357 56, 357 75, 357 76, 357 81, H01L 2948, H01L 2956, H01L 2964

Patent

active

041975510

ABSTRACT:
A semiconductor device having an improved non-diffusive Schottky-barrier junction and metallization layers and method for producing the same. A thin layer of a Schottky-barrier forming metal such as platinum is sputter deposited upon a hot gallium arsenide substrate impact alloying a portion of the Schottky-barrier forming metal with the gallium arsenide material. A refractive metal such as titanium is then sputtered above the Schottky-barrier forming layer at a power level sufficient to alloy the remaining Schottky-barrier forming metal with the refractive metal. A highly conductive layer such as gold is then sputter deposited over the refractive layer to provide ohmic contact. The invention may be used to particular advantage in microwave diode and field effect transistor devices.

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patent: 4110488 (1978-08-01), Risko
Electronic Letters, vol. 11, No. 18, Sept. 4, 1975, High Power C Band Read IMPATT Diodes, pp. 430-431.

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