Thyristor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Other Related Categories

357 234, 357 43, 357 86, H01L 2974

Type

Patent

Status

active

Patent number

049424440

Description

ABSTRACT:
The invention herein disclosed relates to a thyristor of the MOS control type. The thyristor has a series of semiconductor layers of varying conductibility types lying above one another in which the semiconductor layers lying at the ends of the series are provided with end-side electrodes and in which a part of the surface of the next-to-the-last layer not covered by the last layer is charged with a control voltage supplied via a control terminal. A power-saving control is obtained in thyristors of this type. This objective is attained in that a region of the surface of the next-to-the-last layer not covered by the last layer is covered with a thin, insulating layer on which a gate connected with a control terminal is arranged. Next to the edge of the last layer, a zone exhibiting the same conductibility type as this last layer is formed which completely penetrates the next-to-the-last layer.

REFERENCES:
patent: 3831187 (1974-08-01), Neilson
patent: 3972061 (1976-07-01), Nelson
patent: 4137545 (1979-01-01), Becke
patent: 4145700 (1979-03-01), Sambotkar

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thyristor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-97614

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.