Charged particle beam lithography system and method

Electric heating – Metal heating – By arc

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21912119, 21912126, 250396R, 250396ML, 2504922, B23K 1500

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active

051735822

ABSTRACT:
A charged particle beam lithography system includes a beam source of a charged particle beam, a beam shaping aperture for providing a predetermined cross section to the charged particle beam, a first focusing system for focusing the charged particle beam on a first crossover point located on the optical axis, a second focusing system provided between the first crossover point and an object for focusing the charged particle beam on a second crossover point located on the optical axis, a beam deflection system for deflecting the electron beam such that the beam is displaced on the surface of the object, a stage for supporting the object, a mask provided in a vicinity of said first focusing system, and an addressing system for selectively deflecting the charged particle beam such that the charged particle beam is passed through a selected aperture on the mask. The addressing system includes an electrostatic deflector for variable shaping of the charged particle beam and an electromagnetic deflector for deflecting the charged particle beam such that the charged particle beam is selectively passed through a selected one of the plurality of apertures except for the predetermined aperture.

REFERENCES:
patent: 4145597 (1979-03-01), Yasuda
patent: 4213053 (1980-07-01), Pfeiffer
patent: 4243866 (1981-01-01), Pfeiffer et al.
patent: 4363953 (1982-12-01), Katsuta et al.
Patents Abstracts of Japan, vol. 2, No. 6, Jan. 1978, & JP-A-52 112196 (Mitsubishi Denki K.K.) Sep. 20, 1977, * the whole document *.
Extended Abstracts, vol. 82, No. 1, May 1982, Princeton, N.J., pp. 472-473; D. P. Kern et al.: "A round beam exposure system with multiple beam size"* the whole document *.
Patents Abstracts of Japan, vol. 12, No. 101 (E-595) (2948), Apr. 2, 1988, & JP-A-62 232843 (NEC Corp.) Oct. 13, 1987, & * the whole document *.

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