Fishing – trapping – and vermin destroying
Patent
1991-03-20
1992-12-22
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437234, 437971, 437965, 437107, 148DIG110, 148DIG65, H01L 2120, H01L 2136
Patent
active
051734451
ABSTRACT:
A P-type compound semiconductor layer doped with carbon is formed on a semi-insulating substrate by placing the substrate in a reactor, and carrying out vapor-phase epitaxy by feeding and thermally decomposing vapors of an organic metal compound including a methyl radical, arsine, and an alkyl compound of arsenic substantially simultaneously into the reactor so that a C-doped P-type compound semiconductor is deposited on the substrate.
REFERENCES:
patent: 4910167 (1990-03-01), Lee et al.
patent: 4935381 (1990-06-01), Speckman et al.
Moon et al., "A Comparative Study of Selective Carbon Doping in MOCVD GaAs Using Trimethylarsenic and Arsine"; Journal of Electronic Materials, vol. 19, No. 12, pp. 1351-1355, 1990.
Blaauw et al., "Metalorganic Chemical-Vapour-Deposition Growth and Characterization of GaAs"; Can. J. Phys., vol. 63, 1985; pp. 664-669.
Kuech et al.; "Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy"; Appl. Phys. Lett. 53(4); Oct. 1988; pp. 1317-1319.
Dorrity et al.; "Gallium Arsenide"; 1985; pp. 95-117.
Susaki et al, "Single Mode Transverse Junction Stripe Laser", IEEE Tokyo Section, 1978.
Ando Koji
Yagi Tetsuya
Dang Trung
Hearn Brian E.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Method of making P-type compound semiconductor employing trimeth does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making P-type compound semiconductor employing trimeth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making P-type compound semiconductor employing trimeth will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-975141