Thin film semiconductor device and method of manufacturing the s

Details Thin film semiconductor device and method of manufacturing the s Thin film semiconductor device and method of manufacturing the s

1987-03-27

1990-07-17

James, Andrew J.

357 42, 357 15, 357 4, H01L 2978

Patent

active

049424416

ABSTRACT:
Complementary thin fillm transistors (C-TFT) formed on an insulating substrate, comprising a pair of highly resistive n-type silicon islands, a pair of heavily doped n-type regions formed in one of the islands to form source and drain regions of n-channel TFT, a pair of contacts formed on the surface of the other island and establishing a high potential barrier when the underlying region is of n-type and a low potential barrier when the underlying region is inverted to be of p-type. The process for manufacturing complementary TFTs can be simplified significantly.

REFERENCES:
patent: 4091527 (1978-05-01), Goodman
patent: 4206472 (1980-06-01), Chu et al.
patent: 4300152 (1981-11-01), Lepselter
patent: 4736229 (1988-04-01), Holmberg
IBM Technical Disclosure Bulletin, vol. 15, #11, p. 3541, by Anantha et al., Apr. 1973.

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