Semiconductor devices and manufacturing methods

Details Semiconductor devices and manufacturing methods Semiconductor devices and manufacturing methods

1984-04-24

1985-06-18

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148 15, 357 231, H01L 21265

Patent

active

045233683

ABSTRACT:
A field effect device having a gate over a portion of a surface of a semiconductor disposed between a source region and a drain region and including a buried doped region having a conductivity type opposite the conductivity type of the semiconductor formed in the semiconductor under, and spaced from such portion of the surface of the semiconductor. The buried doped region is electrically connected to the gate electrode. With such arrangement a field effect device is formed with a connecting channel having a shallow depth in the semiconductor between the gate and the buried doped layer. A method for fabricating field effect devices is also disclosed, such method including the step of forming a pair of masking surfaces of insulating material on the surface of the semiconductor. An ion implantation masking layer is formed between the pair of masking surfaces to enable the selective implantation of particles in the semiconductor to establish the source and drain regions. With such method a single level of masking is used to define the source, drain and gate regions of the device.

REFERENCES:
patent: 3739237 (1973-06-01), Shannon
patent: 3790411 (1974-02-01), Simms et al.
patent: 3928082 (1975-12-01), Schwettmann et al.
patent: 4025364 (1977-05-01), Smith
patent: 4173063 (1979-11-01), Kniepkamp et al.
patent: 4232439 (1980-11-01), Shibata

Affiliated with

Also associated with

Rating

Semiconductor devices and manufacturing methods does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices and manufacturing methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices and manufacturing methods will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-974334