Method of forming a defect-free semiconductor layer on insulator

Details Method of forming a defect-free semiconductor layer on insulator Method of forming a defect-free semiconductor layer on insulator

1988-11-18

1990-10-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG40, 148DIG59, 148DIG72, 148DIG97, 148 333, 156610, 437 62, 437 83, 437110, 437126, 437959, 437976, H01L 21265, H01L 2120

Patent

active

049620517

ABSTRACT:
An improved method of fabricating a defect-free semiconductor layer and a semiconductor on insulator structure is provided by forming an isoelectronically doped semiconductor layer between a substrate and an semiconductor layer. The isoelectronic dopant atoms are different in atomic size than the atoms of the semiconductor material, thus misfit dislocations are created at the interface of the isoelectronically doped semiconductor layer due to lattice mismatch. Impurities and defects are not only gettered to the misfit dislocation sites, but are also prevented from propagating to the epitaxial layer. These misfit dislocations are thermally stable and are confined in a plane parallel to the interfaces of the isoelectronically doped semiconductor layer, thus very effective gettering agents. If the isoelectroncially doped semiconductor layer us also a heavily doped buried layer, no misfit dislocations are desired because the buried layer is an active device layer. In this case the isoelectronic dopant atoms may offset the non-isoelectronic dopant atoms in atomic size, thus no misfit dislocations are formed.

REFERENCES:
patent: 4442449 (1984-04-01), Lehrer et al.
patent: 4460417 (1984-07-01), Murase et al.
patent: 4529455 (1985-07-01), Bean et al.
patent: 4631234 (1986-12-01), Larrabee
patent: 4661829 (1987-04-01), Bean et al.
patent: 4717681 (1988-01-01), Curran
patent: 4771013 (1988-09-01), Curran
patent: 4806502 (1989-02-01), Jorke et al.
Manasevit et al., "The Properties of Si/Si.sub.1-x Ge.sub.x Films Grown on Si by Chemical Vapor Deposition", J. Electron, Mat., vol. 12, No. 4, 1983, pp. 637-650.
Manasevit et al., "Electron Mobility Enhancement in Epitaxial Multilayer Si-Si.sub.1-x Ge.sub.x Alloy Films on (100)Si," Appl. Phys. Lett., 41(5). Sep. 1982, pp. 464-466.
People et al., "Modulation Doping in Ge.sub.x Si.sub.1-x Bi Strained Heterostructures", Appl. Phys. Lett. 45(11), Dec. 1984, pp. 1231-1233.
Kasper et al., "A One-Dimensional SiGe Superlattice Grown by UHV Epitaxy", Appl. Phys. vol. 8, 1975, pp. 199-205.
Bean, "Recent Developments in the Strained Layer Epitaxy of Germanium-Silicon Alloys", J. Vac. Sci. Technol., B4(6), Nov/Dec. 1986 pp. 1427-1429.

Affiliated with

Also associated with

Rating

Method of forming a defect-free semiconductor layer on insulator does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a defect-free semiconductor layer on insulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a defect-free semiconductor layer on insulator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-973201