Method for improving writing of information in memory targets

Details Method for improving writing of information in memory targets Method for improving writing of information in memory targets

1978-09-21

1980-04-08

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 24, 357 29, 357 91, G11C 1142, H01L 2978

Patent

active

041971442

ABSTRACT:
The amount of charge written into the insulator layer of an electron-beam-addressed metal-insulator-semiconductor target is increased by increasing the number of defects in the insulator to provide additional charge trapping and storage sites. Ion implantation techniques for accomplishing the increase of charge trapping sites are disclosed.

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Learn et al., ". . . Ion-Impl. . . . in . . . Si/SiO.sub.2 System," Jour. Appl. Phys., 48, (1977), 308.
Young et al., ". . . Electron Trapping . . . SiO.sub.2 . . . Al," Jour. Electron Materials, 6, (1977), 569.

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