Superlattice avalanche photodetector

Details Superlattice avalanche photodetector Superlattice avalanche photodetector

1988-10-31

1990-07-17

Jackson, Jr., Jerome

357 16, 357 30, H01L 29205, H01L 2714

Patent

active

049424360

ABSTRACT:
A low noise avalanche photodetector (APD) having repeated superlattice units. Where the principal ionizing carriers are electrons, each unit is formed from p.sup.+ -n.sup.+ layers of a first material, a near intrinsic layer of the first material, and a near intrinsic layer of a second material having an ionization threshold which is larger than that of the first material. Such an APD can be fabricated in a GaAs/AlGaAs material system.

REFERENCES:
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"Optimization and Modeling of Avalance Photodiode Structures: Application to a New Class of Superlattice Photodetectors, the p-i-n, pn Homojunction and p-n Heterojunction APD's", by K. Brennan, IEEE Trans. Electron Dev., vol. ED-34, No. 8, Aug. 1987, pp. 1658-1669.

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