Method for preparing a semiconductor substrate using porous sili

Details Method for preparing a semiconductor substrate using porous sili Method for preparing a semiconductor substrate using porous sili

1994-09-06

1995-08-08

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 83, 437 84, 437 86, 437 62, H01L 2120

Patent

active

054398436

ABSTRACT:
A semiconductor substrate comprises an insulating layer and a compound semiconductor monocrystal thin film formed on said insulating layer, the thermal expansion coefficient of said insulating layer being in the range of 60%-140% of that of said monocrystal thin film.

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