FET-bipolar switching device and circuit

Details FET-bipolar switching device and circuit FET-bipolar switching device and circuit

1982-05-10

1986-08-05

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307270, 307304, 307544, 307581, 357 43, H03K 1704, H03K 1760, H03K 17687

Patent

active

046045350

ABSTRACT:
A switching device and circuit comprises a bipolar transistor and at least two field effect transistors for controlling the bipolar transistor. A first field effect transistor has its drain and source connected across the collector-base of the bipolar transistor and a second field effect transistor has its drain and source connected across the base-emitter of the bipolar transistor. Gates of the first and second field effect transistors are connected in common and supplied with a voltage signal. The first field effect transistor is of an enhancement type and the second field effect transistor is of a depletion type.

REFERENCES:
patent: 3636372 (1972-01-01), Hujita et al.
patent: 4066917 (1978-01-01), Compton et al.
patent: 4286175 (1981-08-01), Baker
patent: 4303841 (1981-12-01), Baker
patent: 4356416 (1982-10-01), Weischedel

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