Method of making dense vertical FET's

Details Method of making dense vertical FET's Method of making dense vertical FET's

1981-05-22

1983-10-04

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 29591, 148187, 148188, 357 23, H01L 21225

Patent

active

044070586

ABSTRACT:
A dielectrically isolated region of a monocrystalline substrate, which has a <100> orientation, has a drain region of a field effect transistor (FET) in a surface having a (100) crystal orientation with the drain region being of opposite conductivity to the conductivity of the substrate. A gate channel extends into the substrate from the drain region and is surrounded at its upper end by the drain region. An enlarged recess extends into the substrate beneath the gate channel and has its walls of opposite conductivity to the conductivity of the substrate to form a source region and a plate of a capacitor when the FET is part of a storage cell. The source region has its upper end surrounded by the gate channel.

REFERENCES:
patent: 4102714 (1978-07-01), DeBar et al.
patent: 4105475 (1978-08-01), Jenne
patent: 4194283 (1980-03-01), Hoffman
patent: 4200968 (1980-05-01), Schroeder
patent: 4264382 (1981-04-01), Anantha et al.
patent: 4272302 (1981-06-01), Jhabvala
patent: 4326332 (1982-04-01), Kenney
patent: 4327476 (1982-05-01), Iwai et al.
patent: 4356211 (1982-10-01), Riseman
patent: 4369564 (1983-01-01), Hiltpold

Affiliated with

Also associated with

Rating

Method of making dense vertical FET's does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making dense vertical FET's, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making dense vertical FET's will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-967462