Method of growing a semiconductor layer and a fabrication method

Details Method of growing a semiconductor layer and a fabrication method Method of growing a semiconductor layer and a fabrication method

1994-01-31

1995-08-08

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117104, 117954, C30B 2502

Patent

active

054389526

ABSTRACT:
A method of fabricating a compound semiconductor device includes the steps of supplying an amine-adduct of a compound that contains a constituent element of a crystal layer that forms the semiconductor device, to a substrate on which the semiconductor device is formed, as a source material of the crystal layer, decomposing the amine-adduct in the vicinity of the substrate such that the constituent element is released, and depositing the constituent element on the substrate to cause a growth of the crystal layer on the substrate.

REFERENCES:
patent: 4464233 (1984-08-01), Mullin et al.
patent: 5082798 (1992-01-01), Arimoto
patent: 5225561 (1993-07-01), Kirlin et al.
patent: 5332451 (1994-07-01), Hata et al.

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