Semiconductor component with power MOSFET and control circuit

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357 74, 357 81, 357 75, H01L 2348

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049472348

ABSTRACT:
A semiconductor component with a power MOSFET and control circuit for controlling the power MOSFET. Both the power MOSFET and the control circuit have separate semiconductor bodies. The semiconductor body of the control circuit is arranged on one of the main surfaces of the semiconductor body of the power MOSFET. The control circuit is electrically insulated from the MOSFET by an insulating layer and mechanically coupled to the MOSFET by means of a bonding layer. The MOSFET is fastened to a cooling body which serves as a heat sink for the semiconductor component. The terminals of the control circuit and the MOSFET are attached to housing connections with leads.

REFERENCES:
patent: 4314270 (1982-01-01), Iwatani
patent: 4599576 (1986-07-01), Yoshida
patent: 4667265 (1987-05-01), Stanojevic et al.
patent: 4730228 (1988-03-01), Einzinger
European Standard Search Report; Apr. 22, 1987.

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