Solid state image sensing device with photodiode to reduce smear

Details Solid state image sensing device with photodiode to reduce smear Solid state image sensing device with photodiode to reduce smear

1988-09-26

1990-08-07

Mintel, William

357 24, 357 20, 357 32, H01L 2714

Patent

active

049472240

ABSTRACT:
In a solid state image sensing device of P-conductivity type well, photo-electro converting region (1) are configured to have a larger area as the depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.

REFERENCES:
patent: 3838439 (1974-09-01), Biard
patent: 4450464 (1984-05-01), Yamada
patent: 4654682 (1987-03-01), Boudewijns
Oda et al., "A CCD Image Sensor with 768.times.490 Pixels," IEEE International Solid-State Circuits Conference, Feb. 25, 1983, pp. 264-265.
E. Oda et al., "A CCD Image Sensor with 768.times.490 Pixels"; pp. 264-265; 1983 IEEE International Solid-State Circuits Conference 2/25/83.

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