Silicon carbide field-effect transistor with improved breakdown

Details Silicon carbide field-effect transistor with improved breakdown Silicon carbide field-effect transistor with improved breakdown

1991-05-24

1992-12-08

Hille, Rolf

Fishing, trapping, and vermin destroying

357 231, 357 238, 357 61, 437100, H01L 2978

Patent

active

051702312

ABSTRACT:
A silicon carbide field-effect transistor is provided which includes a semiconductor substrate, a channel formation layer of silicon carbide formed above the substrate, source and drain regions provided in contact with the channel formation layer, a gate insulator disposed between the source and drain regions, and a gate electrode formed on the gate insulator, wherein a first contact between the channel formation layer and the drain region exhibits different electric characteristics from those of a second contact between the channel formation layer and the source region. Also provided is a method for producing such a silicon carbide field-effect transistor.

REFERENCES:
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4762806 (1988-08-01), Suzuki et al.
patent: 4897710 (1990-01-01), Suzuki et al.
patent: 4945394 (1990-07-01), Palmour et al.
patent: 4947218 (1990-08-01), Edmond et al.
patent: 4980303 (1990-12-01), Yamauchi
patent: 4994413 (1991-02-01), Eshita
U.S. Patent Application Ser. No. 07/534,046 filed Jun. 6, 1990, Fujii et al.
J. W. Palmour et al., J. Appl. Phys. 64(4), Published on Aug. 15, 1988, pp. 2168-2177.
Yu. M. Tairov et al., Journal of Crystal Growth 52 (1981), pp. 246-150.

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