Thin film transistors with elongated coiled electrodes, and larg

Details Thin film transistors with elongated coiled electrodes, and larg Thin film transistors with elongated coiled electrodes, and larg

1999-07-07

2000-12-05

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 57, 257347, 257350, 257401, H01L 2904, H01L 3120, H01L 31036, H01L 310376

Patent

active

061570486

ABSTRACT:
A thin film transistor has source (20) and drain (10) electrodes which each comprise a coiled elongate portion. One (14) of these portions coils inwardly to a central connector portion (12), and the other (22) coils outwardly to a peripheral connector portion (16). The two coiled portions are interlinked to define between them a substantially uniform spacing (24) corresponding to a channel region of the transistor. This arrangement enables the length to width ratio of the transistor to be reduced, giving rise to an increased current capacity of the transistor. By making one elongate portion (14) longer than the other (22), the transistor can have a source-gate capacitance lower than its drain-gate capacitance. These transistors may form switching elements in large area electronic devices, such as electroluminescent displays, plasma displays, electrostatic print heads, and X-ray dynamic beam attenuators.

REFERENCES:
patent: 3803461 (1974-04-01), Beneking
patent: 4783147 (1988-11-01), Maurice et al.
patent: 5144388 (1992-09-01), Sawada et al.
patent: 5874746 (1999-02-01), Holmberg et al.

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