Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-12-22
2000-12-05
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257415, 257531, 423445, H01L 2906
Patent
active
061570435
ABSTRACT:
A compound nanotube (17) is made of carbon nitride (CN). Another compound nanotube (19) is made of boron carbide (BC.sub.3) with alkali metal doped. Each of the nanotubes has a distorted configuration of atoms in a predetermined direction with a lower symmetry than that of an undistorted configuration. A solenoid element comprises the compound nanotube. A magnetic generating apparatus comprises a compound nanotube, means for applying a tensile to the compound nanotube in a longitudinal direction of said compound nanotube, and means for flowing current at both ends of the compound nanotube. Each of the nanotubes is applied with mechanical stress to controllably vary a current flow direction. Specifically, tensile stress is applied in a longitudinal direction (21) of the nanotube so that an electric current spirally flows around a surface of the nanotube along a spiral path having a diameter of several nanometers, as shown in arrows (23). Thus, a large magnetic field is generates with weak current so that an arrangement for generating a strong magnetic field can be miniaturized.
REFERENCES:
patent: 5401975 (1995-03-01), Ihara
patent: 5830326 (1998-11-01), Iijima
Andreas Thess et al., "Crystalline Ropes of Metallic Carbon Nanotubes", Science, vol. 273, Jul. 26, 1996, pp. 483-487.
Dresselhaus, "Science of Fullerenes and Carbon Nanotubes" Academic Press San Diego, 1995.
Jackson, Jr. Jerome
NEC Corporation
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