Semiconductor device and method of fabricating

Details Semiconductor device and method of fabricating Semiconductor device and method of fabricating

1998-06-29

2000-12-05

Everhart, Caridad

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438768, 438775, 438658, H01L 2120

Patent

active

061566195

ABSTRACT:
A capacitor in a semiconductor device is constituted by a lower electrode having a laminated layer including an adhesive layer formed on an insulating film, a barrier layer formed so as to cover the upper surface of the insulating layer, a nitride side formed so as to cover the side face of the adhesive layer, and an electrode layer formed so as to cover the upper surface of the barrier layer, a capacitor insulating film formed so as to cover the upper surface and side surface of the lower electrode, and an upper electrode formed so as to cover the surface of the capacitor insulating film.

REFERENCES:
patent: 5102820 (1992-04-01), Chiba
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5371700 (1994-12-01), Hamada
patent: 5407855 (1995-04-01), Maniar et al.
Anonymous, "Low Temperature Selective Nitridization of Metals in Polycide Stack Structures" Research Disclosure, No. 344107, Dec. 1992.
Y. Ohno et al., "A Memory Cell Capacitor with BaxSr1-xTi03(BST) Film for Advanced DRAMs" 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 149-150.

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