Method of making amorphous deposited polycrystalline silicon the

Details Method of making amorphous deposited polycrystalline silicon the Method of making amorphous deposited polycrystalline silicon the

1990-09-26

1992-12-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437967, 437973, 148DIG122, 148DIG154, H01L 21469

Patent

active

051698064

ABSTRACT:
A resistive heating element is formed by depositing an amorphous silicon film on selected portions of a substrate and heating the deposited amorphous silicon film so that it undergoes solid phase epitaxy to form a (111) textured polycrystalline silicon film. The method is particularly useful for forming electro-thermal transducers for thermal ink jet printheads.

REFERENCES:
patent: 4358326 (1982-11-01), Doo
patent: 4452645 (1985-06-01), Chu et al.
patent: 4693759 (1987-09-01), Noguchi et al.
S. Wolf & R. N. Tauber Silicon Processing for the VLSI Era Volume 1: Process Technology Lattice Press; Sunset Beach, CA (1986) pp. 169-180.

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