Method of fabricating semiconductor devices by laser planarizati

Details Method of fabricating semiconductor devices by laser planarizati Method of fabricating semiconductor devices by laser planarizati

1990-12-19

1992-12-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

156652, 156653, 437173, 437174, 437203, H01L 2128

Patent

active

051698005

ABSTRACT:
A method of fabricating semiconductor devices, includes the steps of (a) forming a plurality of insulating films on a base layer, the plurality of insulating films includes at least a lower layer insulating film and an upper layer insulating film, the lower layer insulating film being smaller in etch rate than the upper layer insulating film and serving as an etching stopper, (b) forming a first opening portion by etching the upper layer insulating film, and exposing the lower layer insulating film to the first opening portion, (c) forming a second opening portion smaller in width than the first opening portion by etching the lower layer insulating film exposed to the first opening portion, and exposing the base layer to the second opening portion, (d) forming a metal layer in the first and second opening portions so that it can contact with the base layer exposed to the second opening portion, and (f) burying the metal layer in the first and second opening portions and planarizing the buried metal layer by irradiating the metal layer with a laser beam.

REFERENCES:
patent: 4674176 (1987-06-01), Tuckerman
patent: 4758533 (1988-07-01), Magee et al.
patent: 4800179 (1989-01-01), Mukai
patent: 4920070 (1990-04-01), Murai
Incropera et al., "Funoamentals of Heat and Mass Transfer", John Wiley & Sons, New York, NY (1985) p. 38.

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