Method of fabrication of pnp structure in a common substrate con

Details Method of fabrication of pnp structure in a common substrate con Method of fabrication of pnp structure in a common substrate con

1991-03-22

1992-12-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 59, 437 57, 257565, H01L 2170, H01L 2970, H01L 2700

Patent

active

051697947

ABSTRACT:
A pnp device in BiCMOS structure (1). PNP transistors (4) are fabricated without the need for additional process steps on the same substrate as npn (2), PMOS (8), and NMOS (6) devices. The process not only requires a minimum number of additional process steps, but results in devices with near optimum device characteristics.

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Burger et al., "An Advanced 0.8 .mu.m Complementary BiCMOS Technology for Ultra-High Speed Circuit Performance" (Unknown Publicaton Data).

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