Top emitting VCSEL with implant

Details Top emitting VCSEL with implant Top emitting VCSEL with implant

1992-03-26

1993-10-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

372 45, H01L 2120

Patent

active

052565963

ABSTRACT:
VCSELs including a central active layer with upper and lower mirror stacks wherein a circular trench is formed in one mirror stack to define a lasing area. The trench reduces reflectivity to prevent lasing outside the operating area and a deep beryllium implant in either of the mirror stacks, along with the trench, confines current distribution to maximize power output and efficiency. A transparent metal contact is used as a top contact in one embodiment.

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Geels et al "Submilliamp Threshold Vertical-cavity laser diodes" Appl. Phys. Letts 57(1990), pp. 1605-1607.
Geels et al "Low Threshold Planarised Vertical-Cavity Surface-Emitting Lasers" IEEE Photonics Technology Letts 2(1990), 231-236.
Yang et al "Low threshold operation of a GaAs single quantum-well mushroom structure surface-emitting laser" Appl. Phys. Letts 58(1991), pp. 1780-1782.

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