Method for fabricating a semiconductor integrated circuit device

Details Method for fabricating a semiconductor integrated circuit device Method for fabricating a semiconductor integrated circuit device

1992-08-11

1993-10-26

Fourson, George

Fishing, trapping, and vermin destroying

437 65, H01L 2176

Patent

active

052565920

ABSTRACT:
A method of the invention comprises the step of forming on part of a silicon substrate (101) a three-layered film consisting of a first silicon nitride film (102), a first silicon oxide film (103) and a second silicon nitride film (104) and forming a third silicon nitride film (106) on side wall portions of the three-layered film, the step of etchiing an exposed silicon substrate (101) to form a first groove having substantially vertical side walls and refilling the first groove with a silicon oxide film (108), and the step of removing the second and third silicon nitride films (104,106) to form a second groove (111) having substantially vertical side walls relative to the silicon substrate (101) exposed by the removal. Accordingly, the second groove (111) which serves as a trench groove by self alignment is formed an end portion of the silicon oxide film (108) within a field region (107) as having a structure which is in direct contact with an element forming region (115). In addition, the groove width is constant as a width of the third silicon nitride film (106), thus permitting the parasitic capacitance between the collector and the substrate to be minimized.

REFERENCES:
patent: 4505025 (1985-03-01), Kurosawa et al.
patent: 4868136 (1989-09-01), Ravaglia
patent: 5009703 (1991-04-01), Zdebel et al.

Affiliated with

Also associated with

Rating

Method for fabricating a semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-959046