Method for producing a non-volatile memory cell using spacers

Details Method for producing a non-volatile memory cell using spacers Method for producing a non-volatile memory cell using spacers

1992-05-22

1993-10-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437 52, 148DIG111, H01L 21266

Patent

active

052565840

ABSTRACT:
Method for producing a non-volatile memory cell and obtained memory cell. This method consists of embodying strips in a stacking of one nonconducting film and one conductive film, both films intended to respectively form the gate nonconductors (210) and the floating gates (208) of transistors, of forming spacers (230) on the flanks of the strips of said stacking, of eliminating the spacers on the side of the drains of the memory points to be embodied, of implanting ions of a type with conductivity differing from that of the substrate by using the remaining spacers and the strips of said stacking as a mask so as to form the sources and drains (214, 216) of the transistors, respectively offset and aligned with respect to said strips, of eliminating the remaining spacers, of forming a thin electric nonconducting film (208) on the sources and drains of the transistors, of embodying conductive strips (206a) perpendicular to the diffused source and drain zones, and of etching the strips of said stacking by using the conductive strips as a mask.

REFERENCES:
patent: 4661833 (1987-04-01), Mizutani
patent: 4852062 (1989-07-01), Baker
patent: 5041886 (1991-08-01), Lee
patent: 5063172 (1991-11-01), Manley
patent: 5073513 (1991-12-01), Lee
patent: 5120672 (1992-06-01), Mitchell et al.

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