Method for manufacturing semiconductor device having a contact s

Details Method for manufacturing semiconductor device having a contact s Method for manufacturing semiconductor device having a contact s

1992-05-22

1993-10-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437194, 437203, 437228, 437235, 437247, H01L 2144

Patent

active

052565645

ABSTRACT:
In order to prevent a passivation film on an inner wall of a contact hole from being thinned to thereby improve an ability of the passivation film, an interlayer insulating film is formed on a semiconductor substrate in a surface region of which a diffusion layer is formed and a contact hole is formed therethrough to expose the diffusion layer. An aluminum wiring layer covering the inner wall of the contact hole and in contact with the diffusion layer is formed, on which a first thin passivation film is formed. After burying the contact hole with a polyimide layer, a second thick passivation film is formed.

REFERENCES:
patent: 4676867 (1987-06-01), Elkins et al.
patent: 4775550 (1988-10-01), Chu et al.
patent: 4894351 (1990-01-01), Batty
patent: 5079188 (1992-01-01), Kawai

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device having a contact s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device having a contact s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device having a contact s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-958777