Method for forming a semiconductor buried contact with a removab

Details Method for forming a semiconductor buried contact with a removab Method for forming a semiconductor buried contact with a removab

1996-10-18

1998-03-17

Tsai, Jey

Fishing, trapping, and vermin destroying

437195, 148DIG20, H01L 218242

Patent

active

057285969

ABSTRACT:
A removable oxide spacer is used to reduce the size of a contact opening in a DRAM cell between polysilicon word lines below a lithographic minimum. The removable spacer is deposited before the buried contact patterning and etching. Since word lines diverge at a cell location, the removable spacer retains a lesser thickness over the divergent area contact opening and a greater thickness elsewhere between word lines due to the more narrow gap therebetween and the spacer being deposited such that if fills the gap. The removable spacer reduces the buried contact size since the actual self-aligned contact area is defined by the spacer sidewall. Etching of the spacer creates a buried contact opening smaller than lithographic minimum because silicon oxide surrounding the buried contact area is protected by the removable spacer. The removable spacer is removed after resist strip leaving a sublithographic buried contact opening.

REFERENCES:
patent: 5051380 (1991-09-01), Maeda et al.
patent: 5223448 (1993-06-01), Su
patent: 5422315 (1995-06-01), Kobayashi

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