Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-12-03
1999-06-01
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257 55, 257751, 257734, 257295, H01L 2904, H01L 2348, H01L 2940, H01L 2352
Patent
active
059090596
ABSTRACT:
On a main surface of a silicon substrate of one conductivity type, a diffusion layer of the opposite conductivity type is formed, and the main surface of the silicon substrate is covered by an insulator film. The insulator film is formed with a contact hole which extends to reach the diffusion layer of the opposite conductivity type. A contact plug is provided in the contact hole. The contact plug fills the contact hole and comprises a first silicon layer of the opposite conductivity type directly connected to the diffusion layer of the opposite conductivity type, a silicon-germanium alloy layer of the opposite conductivity type directly contact to the first silicon layer, and a second silicon layer of the opposite conductivity type directly contact to the silicon-germanium alloy layer. Wiring is provided on the surface of the insulator film in direct contact to the contact plug. As a result, increase in leakage at the junction of the diffusion layer is prevented by the low-resistance contact plug including the silicon-germanium alloy.
REFERENCES:
patent: 5399511 (1995-03-01), Taka et al.
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5561326 (1996-10-01), Ito et al.
patent: 5633179 (1997-05-01), Kamins et al.
Hada Hiromitsu
Kasai Naoki
Mori Hidemitsu
Tatsumi Toru
NEC Corporation
Nguyen Cuong Quang
Thomas Tom
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