Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1990-12-17
1994-08-16
Kuntz, Curtis
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307304, 307491, 3072961, H03K 17687, H03K 3353, H03K 301, G06G 710
Patent
active
053389891
ABSTRACT:
A microwave integrated circuit comprises a first field effect transistor (FET) whose source is grounded via a capacitor and is connected to a source bias constant current source and to the drains of second field effect transistors whose gates are connected to a voltage power supply, an input matching circuit which is connected between the gate of the first FET and an input terminal, and an output matching circuit which is connected between the drain of the first FET and an output terminal. A drain current of the first FET having an almost constant value flows independent of variations in the direct current transistor characteristics and a rapid switching response is obtained when the first FET is driven on or off by a pulse.
REFERENCES:
patent: 4011518 (1977-03-01), Irvine et al.
patent: 4189682 (1980-02-01), Sechi
patent: 4476446 (1984-10-01), Blight
patent: 4500848 (1985-02-01), Harchand et al.
patent: 4504796 (1985-03-01), Igarashi
patent: 4996504 (1991-02-01), Huber et al.
Fukuda et al. "A New Microwave Amplitude Limiter Using GaAs FETs" Jan. 1978, pp. 61-66 (330-277).
IEEE 1987 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Pp. 23-26; Sun & et al., "A Low Current, High Gain Monolithic Amplifier Covering 5-20 GHz Bandwidth"*FIG. 1*, *p. 23, column 1, line 33-column 2 line 53*.
IEEE MTT-S International Microwave Symposium Digest 1983, May 1983, Boston, Mass., pp. 145-147; Watkins et al. "A 60 GHz FET Amplifier"; *FIG. 4* *p. 146, column 1, line 10-line 18*.
Electronic Letters, vol. 20, No. 21, Oct. 11, 1984, Staines Meddelsex, Great-Britain, pp. 898-899; Esfandiari et al.
"Novel GaAs Monolithic Multistage X-Ku Band Amplifier"; *FIG. 1*, p. 898, *column 2, line 9-p. 899, column 1, line 15*.
Kuntz Curtis
Mitsubishi Denki & Kabushiki Kaisha
Tran Sinh
LandOfFree
Microwave integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Microwave integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave integrated circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-954489