Fishing – trapping – and vermin destroying
Patent
1993-07-07
1994-08-16
Fourson, George
Fishing, trapping, and vermin destroying
437187, 437912, 437947, 437229, 156644, 148DIG161, H01L 2144
Patent
active
053387031
ABSTRACT:
In a method for producing a recessed gate field effect transistor including a recess in a semiconductor substrate and a gate electrode disposed in the recess, a photoresist film is applied to the semiconductor substrate and source and drain electrodes on the substrate, a first insulating film is formed on the photoresist film, a resist pattern, which has an opening for processing the first insulating film and the photoresist film are etched using the resist pattern as a mask to form an opening having a width increasing in the direction of the substrate, a second insulating film is formed on opposite side walls of the opening, the semiconductor substrate is etched using the opening narrowed by the second insulating film in the substrate to form a recess, the second insulating film is selectively removed by etching, gate metal is deposited on the photoresist and on the substrate in the recess, and unnecessary gate metal is removed by lifting-off the resist film.
REFERENCES:
patent: 4700462 (1987-10-01), Beaubien et al.
patent: 5122387 (1992-06-01), Takenaka et al.
patent: 5190892 (1993-03-01), Sano
Fourson George
Mason David M.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Method for producing a recessed gate field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing a recessed gate field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a recessed gate field effect transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-951707